R2J25953SP Datasheet, PDF (1/17 Pages) Renesas Technology Corp – H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET

Preliminary Datasheet
R2J25953SP
H-Bridge Control High Speed Power Switching
with Built-in Driver IC and Power MOS FET
R07DS0044EJ0400
Rev.4.00
May 09, 2013
Description
The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver
in a single HSOP-36 package.
Features
 For Automotive application
 Built-in low on state resistance MOS FET.
(Pch: 16 m Max., Nch: 11 m Max.)
 Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.
 Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD)
and Overcurrent Detection.
 Built-in diagnostic function.
 Built-in cross-conduction protection.
 Small Surface mounting package: HSOP-36
Block Diagram
Reverce battery
M
protection device
VBAT _Vz
Cp
VB1
VBS1
VCC VBS2
VB2
OUT1
Pch MOS
Dr.
Dr.
Nch MOS
LVI, OVD
Overcurrent detection
TSD
Logic
Pch MOS
Dr.
OUT2
Dr.
Nch MOS
PGND1
PWM INA INB DIAG LGND
V30
C1
PGND2
Pull-up in the Microcomputer
R1 ^{power supply}
Microcomputer
R07DS0044EJ0400 Rev.4.00
May 09, 2013
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