R2J20656ANP Datasheet, PDF (1/16 Pages) Renesas Technology Corp – Integrated Driver - MOS FET (DrMOS)

Preliminary Datasheet
R2J20656ANP
Integrated Driver - MOS FET (DrMOS)
R07DS0201EJ0100
Rev.1.00
Jan 25, 2011
Description
The R2J20656ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating
the need for an external SBD for this purpose.
Features
 Compliant with Intel 6  6 DrMOS Specification.
 Built-in power MOS FET suitable for Notebook, Desktop, Server application.
 Low-side MOS FET with built-in SBD for lower loss and reduced ringing.
 Built-in driver circuit which matches the power MOS FET
 Built-in tri-state input function which can support a number of PWM controllers
 High-frequency operation (above 1 MHz) possible
 VIN operating-voltage range: 27 Vmax
 Large average output current (Max.35 A)
 Achieve low power dissipation
 Controllable driver: Remote on/off
 Zero current detection for a diode emulation operation
 Double thermal protection: Thermal Warning & Thermal Shutdown
 Built-in bootstrapping Switch
 Small package: QFN40 (6 mm  6 mm  0.95 mm)
 Pb-free/Halogen-Free
Outline
THWN
DISBL#
ZCD_EN#
PWM
VCIN BOOT
Integrated Driver-MOS FET (DrMOS)
QFN40 package 6 mm × 6 mm
GH VIN
1
40
Driver
Pad
10
11
High-side
MOS Pad
MOS FET Driver
VSWH
Low-side MOS Pad
CGND VDRV
GL PGND
31
30
(Bottom view)
20
21
R07DS0201EJ0100 Rev.1.00
Jan 25, 2011
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