R2J20652ANP Datasheet, PDF (1/17 Pages) Renesas Technology Corp – Integrated Driver - MOS FET (DrMOS)

Preliminary
R2J20652ANP
Integrated Driver – MOS FET (DrMOS)
REJ03G1867-0300
Rev.3.00
Feb 26, 2010
Description
The R2J20652ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating
the need for an external SBD for this purpose.
Features
 Based on Intel 6  6 DrMOS specification pin out
 Built-in power MOS FET suitable for Notebook, Desktop, Server application
 Low-side MOS FET with built-in SBD for lower loss and reduced ringing
 Built-in driver circuit which matches the power MOS FET
 Built-in tri-state input function which can support a number of PWM controllers
 VIN operating-voltage range: 27 V max
 High-frequency operation (above 1 MHz) possible
 Large average output current (Max. 35 A)
 Achieve low power dissipation
 Controllable driver: Remote on/off
 Low-side MOS FET disabled function for DCM operation
 Built-in bootstrapping switch
 Small package: QFN40 (6 mm  6 mm  0.95 mm)
 Terminal Pb-free/Halogen-free
Outline
Reg5V
DISBL#
LSDBL#
PWM
VCIN BOOT
Integrated Driver-MOS FET (DrMOS)
QFN40 package 6 mm × 6 mm
GH VIN
1
40
Driver
Pad
10
11
High-side
MOS Pad
MOS FET Driver
VSWH
Low-side MOS Pad
CGND
GL PGND
31
30
(Bottom view)
20
21
REJ03G1867-0300 Rev.3.00 Feb 26, 2010
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