R2J20651ANP Datasheet, PDF (1/18 Pages) Renesas Technology Corp – Integrated Driver - MOS FET (DrMOS)

Preliminary
R2J20651ANP
Integrated Driver – MOS FET (DrMOS)
REJ03G1792-0100
Rev.1.00
Jun 03, 2009
Description
The R2J20651ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver
in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier
diode (SBD), eliminating the need for an external SBD for this purpose.
Features
• Compliant with Intel 6 × 6 DrMOS specification
• Built-in power MOS FET suitable for applications with 5 V/12 V input
• Built-in driver circuit which matches the power MOS FET
• Built-in tri-state input function which can support a number of PWM controllers
• VIN operating-voltage range: 16 V max
• High-frequency operation (above 1 MHz) possible
• Large average output current (Max. 35 A)
• Achieve low power dissipation
• Controllable driver: Remote on/off
• Low-side MOS FET disabled function for DCM operation
• Built-in thermal warning
• Built-in Schottky diode for bootstrapping
• Small package: QFN40 (6 mm × 6 mm × 0.95 mm)
• Terminal Pb-free/Halogen-free
Outline
THWN
DISBL#
LSDBL#
PWM
VCIN BOOT
Integrated Driver-MOS FET (DrMOS)
QFN40 package 6 mm × 6 mm
GH VIN
1
40
Driver
Pad
10
11
High-side
MOS Pad
MOS FET Driver
VSWH
Low-side MOS Pad
CGND VDRV
GL PGND
31
30
(Bottom view)
20
21
REJ03G1792-0100 Rev.1.00 Jun 03, 2009
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