R2J20604NP Datasheet, PDF (1/15 Pages) Renesas Technology Corp – Integrated Driver - MOS FET (DrMOS)

R2J20604NP
Integrated Driver – MOS FET (DrMOS)
REJ03G1605-0200
Rev.2.00
Jun 30, 2008
Description
The R2J20604NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in
a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier
diode (SBD), eliminating the need for an external SBD for this purpose.
Integrating a driver and both high-side and low-side power MOS FETs, the new device is also compliant with the
package standard “Integrated Driver – MOS FET (DrMOS)” proposed by Intel Corporation.
Features
• Built-in power MOS FET suitable for applications with 12 V input and low output voltage
• Built-in driver circuit which matches the power MOS FET
• Built-in tri-state input function which can support a number of PWM controllers
• Capable of 3.3 V PWM signal
• VIN operating-voltage range: 16 V max
• High-frequency operation (above 1 MHz) possible
• Large average output current (Max. 40 A)
• Achieve low power dissipation (About 4.4 W at 1 MHz, 25 A)
• Controllable driver: Remote on/off
• Built-in Schottky diode for bootstrapping
• Low-side drive voltage can be independently set
• Small package: QFN56 (8 mm × 8 mm × 0.95 mm)
• Terminal Pb-free
Outline
VCIN BOOT
GH VIN
1
14
Reg5V
56
15
Driver
Tab
High-side MOS
Tab
DISBL#
PWM
MOS FET Driver
VSWH
Low-side MOS Tab
43
28
CGND VLDRV
GL PGND
42
29
(Bottom view)
QFN56 package 8 mm × 8 mm
REJ03G1605-0200 Rev.2.00 Jun 30, 2008
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