R2A25107KFP_15 Datasheet, PDF (1/24 Pages) Renesas Technology Corp – Intelligent Power Device for MOSFET Pre-drive

Preliminary Data Sheet
R2A25107KFP
Intelligent Power Device for MOSFET Pre-drive
R07DS0689EJ0100
Rev.1.00
Mar 22, 2012
Description
The R2A25107KFP device is an intelligent power device to pre-drive the FET inverter of a 3-phase blushless motor.
This device contains three sets of pre-driver that are applicable to both 12-V and 24-V battery systems. This IC also
contains a step down converter, charge pump circuit for the power supply of high-side MOSFET gate driver, 5 V series
regulator, watchdog timer and protection circuits for thermal shutdown (TSD) and over-current detection.
Features
 Wide operating voltage range: 7 V to 36 V (VBAT, VBAT2)
 On-chip 3-phase pre-driver circuit
 PWM control: up to 20 kHz
 Totem pole type MOSFET gate drive circuit
 On-chip power supplies
 Step down converter: 6.2 V typ.
 Charge pump circuit for power supply of high-side FET drive: >5 V
 5-V series regulator for MCU: <70 mA
 On-chip protection circuits
 Thermal shutdown (TSD)
 Over-current detection in the step down converter
 Over-current detection of motor current
 On-chip watchdog timer circuit (WDT)
 Band gap reference circuit
 Internal oscillator: 265 kHz typ.
 48-pin LFQFP package
Application
 Pre-driver for middle class 3-phase blushless motors (up to 50 A)
 Best suited for automotive
Ordering Information
Part No.
R2A25107KFP#U5
Lead Plating
Sn-Cu
Packing
Tray
Package
PLQP0048KB-A
Note: The information contained in this document is the one that was obtained when the document was issued, and
may be subject to change.
R07DS0689EJ0100 Rev.1.00
Mar 22, 2012
Page 1 of 22