R1WV6416R Datasheet, PDF (1/18 Pages) Renesas Technology Corp – 64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)

Preliminary
R1WV6416R Series
64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
REJ03C0368-0001
Preliminary
Rev.0.01
2008.03.24
Description
The R1WV6416R Series is a family of low voltage 64-Mbit static RAMs organized as 4,194,304-word by
16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
The R1WV6416R Series is suitable for memory applications where a simple interfacing, battery operating
and battery backup are the important design objectives.
The R1WV6416R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with
pin pitch of 0.5mm], 52-pin micro thin small outline package [µTSOP (II): 10.79mm x 10.49mm with pin pitch
of 0.4mm] and 48-ball fine pitch ball grid array [f-BGA] package. It gives the best solution for compaction of
mounting area as well as flexibility of wiring pattern of printed circuit boards.
Features
• Single 2.7~3.6V power supply
• Small stand-by current: 8 µA (3.0V, typical)
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie Capability
• OE# prevents data contention on the I/O bus
Ordering Information
Type No.
R1WV6416RSA-5S%
Access time
55 ns^*1
Package
12mm x 20mm 48-pin plastic TSOP (I)
R1WV6416RSA-7S%
R1WV6416RSD-5S%
70 ns
55 ns^*1
(normal-bend type) (48P3R)
350 mil 52-pin plastic μ-TSOP (II)
R1WV6416RSD-7S%
R1WV6416RBG-5S%
R1WV6416RBG-7S%
70 ns
55 ns^*1
70 ns
(normal-bend type) (52PTG)
f-BGA 0.75mm pitch 48-ball
Note1. 55ns parts can be supported under the condition of the input timing limitation toward SRAM on customer’s
system. Please contact our sales office in your region, in case of the inquiry for 55ns parts.
% - Temperature version; see table below
%
Temperature Range
R
0 ~ +70 °C
I
-40 ~ +85 °C
REJ03C0368-0001, Rev.0.01, 2008.03.24
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