R1RW0416DI_10 Datasheet, PDF (1/13 Pages) Renesas Technology Corp – Wide Temperature Range Version 4M High Speed SRAM (256-kword × 16-bit)

R1RW0416DI Series
Wide Temperature Range Version
4M High Speed SRAM (256-kword × 16-bit)
Datasheet
REJ03C0109-0201
Rev.2.01
Jun 16, 2010
Description
The R1RW0416DI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access
time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most
appropriate for the application which requires high speed, high density memory and wide bit width configuration, such
as cache and buffer memory in system. The R1RW0416DI is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin
plastic TSOPII for high density surface mounting.
Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Access time: 10ns/12 ns (max)
• Completely static memory
 No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
 All inputs and outputs
• Operating current: 145/130 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
• Center V_CC and V_SS type pin out
• Temperature range: −40 to +85°C
Ordering Information
Type No.
R1RW0416DGE-0PI
R1RW0416DGE-2PI
R1RW0416DSB-0PI
R1RW0416DSB-2PI
10ns
12 ns
10 ns
12 ns
Access time
Package
400-mil 44-pin plastic SOJ (44P0K)
400-mil 44-pin plastic TSOPII (44P3W-H)
REJ03C0109-0201 Rev.2.01
Jun 16, 2010
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