R1RW0408DI Datasheet, PDF (1/12 Pages) Renesas Technology Corp – Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)

R1RW0408DI Series
Wide Temperature Range Version
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0113-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408DI
is packaged in 400-mil 36-pin SOJ for high density surface mounting.
Features
• Single supply: 3.3 V ± 0.3 V
• Access time: 12 ns (max)
• Completely static memory
 No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
 All inputs and outputs
• Operating current: 100 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
• Center V_CC and V_SS type pin out
• Temperature range: −40 to +85°C
Ordering Information
Type No.
R1RW0408DGE-2PI
Access time
12 ns
Package
400-mil 36-pin plastic SOJ (36P0K)
Rev.1.00, Mar.12.2004, page 1 of 10