R1RW0408D Datasheet, PDF (1/14 Pages) Renesas Technology Corp – 4M High Speed SRAM (512-kword x 8-bit)

R1RW0408D Series
4M High Speed SRAM (512-kword × 8-bit)
REJ03C0111-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D
is packaged in 400-mil 36-pin SOJ for high density surface mounting.
Features
• Single supply: 3.3 V ± 0.3 V
• Access time: 12 ns (max)
• Completely static memory
 No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
 All inputs and outputs
• Operating current: 100 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
: 0.8 mA (max) (L-version)
• Data retention current: 0.4 mA (max) (L-version)
• Data retention voltage: 2 V (min) (L-version)
• Center V_CC and V_SS type pin out
Rev.1.00, Mar.12.2004, page 1 of 12