R1RP0404D Datasheet, PDF (1/13 Pages) Renesas Technology Corp – 4M High Speed SRAM (1-Mword × 4-bit)

R1RP0404D Series
4M High Speed SRAM (1-Mword × 4-bit)
REJ03C0116-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RP0404D is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed
access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
technology. It is most appropriate for the application which requires high speed and high density memory,
such as cache and buffer memory in system. The R1RP0404D is packaged in 400-mil 32-pin SOJ for high
density surface mounting.
Features
• Single 5.0 V supply: 5.0 V ± 10%
• Access time 12 ns (max)
• Completely static memory
 No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
 All inputs and outputs
• Operating current: 130 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
: 1.0 mA (max) (L-version)
• Data retention current: 0.5 mA (max) (L-version)
• Data retention voltage: 2.0 V (min) (L-version)
• Center V_CC and V_SS type pin out
Rev.1.00, Mar.12.2004, page 1 of 11