R1LV3216R Datasheet, PDF (1/18 Pages) Renesas Technology Corp – 32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)

Preliminary
R1LV3216R Series
32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)
REJ03C0367-0001
Preliminary
Rev.0.01
2008.03.24
Description
The R1LV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2,097,152-word by
16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies.
The R1LV3216R Series is suitable for memory applications where a simple interfacing, battery operating
and battery backup are the important design objectives.
The R1LV3216R Series is provided in 48-pin thin small outline package [TSOP (I): 12mm x 20mm with pin
pitch of 0.5mm] and 52-pin micro thin small outline package [µTSOP (II): 10.79mm x 10.49mm with pin pitch
of 0.4mm]. It gives the best solution for compaction of mounting area as well as flexibility of wiring pattern of
printed circuit boards.
Features
• Single 2.7~3.6V power supply
• Small stand-by current: 4 µA (3.0V, typical)
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie Capability
• OE# prevents data contention on the I/O bus
Ordering Information
Type No.
R1LV3216RSA-5S%
Access time
55 ns^*1
Package
12mm x 20mm 48-pin plastic TSOP (I)
R1LV3216RSA-7S%
R1LV3216RSD-5S%
70 ns
55 ns^*1
(normal-bend type) (48P3R)
350 mil 52-pin plastic μ-TSOP (II)
R1LV3216RSD-7S%
70 ns
(normal-bend type) (52PTG)
Note1. 55ns parts can be supported under the condition of the input timing limitation toward SRAM on customer’s
system. Please contact our sales office in your region, in case of the inquiry for 55ns parts.
% - Temperature version; see table below
%
Temperature Range
R
0 ~ +70 °C
I
-40 ~ +85 °C
REJ03C0367-0001, Rev.0.01, 2008.03.24
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