R1LV1616R_07 Datasheet, PDF (1/16 Pages) Renesas Technology Corp – 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)

R1LV1616R Series
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
REJ03C0101-0300Z
Rev.3.00
2007.08.28
Description
The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm], a 48pin thin small outline mount device[TSOP / 12mm x 20mm with the pin-
pitch of 0.5mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8
array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed
circuit boards.
Features
• Single 2.7-3.6V power supply
• Small stand-by current:2µA (3.0V, typ.)
• Data retention supply voltage =2.0V
• No clocks, No refresh
• All inputs and outputs are TTL compatible
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie capability
• OE# prevents data contention on the I/O bus
• Process technology: 0.15um CMOS
REJ03C0101-0300Z Rev.3.00 2007.08.28
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