R1LV1616HSA-I Datasheet, PDF (1/21 Pages) Renesas Technology Corp – 16 M SRAM (1-Mword x 16-bit / 2-Mword x 8-bit)

R1LV1616HSA-I Series
Wide Temperature Range Version
16 M SRAM (1-Mword  16-bit / 2-Mword  8-bit)
REJ03C0195-0102
Rev. 1.02
Feb.23.2017
Description
The R1LV1616HSA-I Series is 16-Mbit static RAM organized 1-Mword  16-bit / 2-Mword  8-bit with
embedded ECC. R1LV1616HSA-I Series has realized higher density, higher performance and low power
consumption by employing CMOS process technology (6-transistor memory cell). It offers low power
standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-pin
plastic TSOPI for high density surface mounting.
Features
 Single 3.0 V supply: 2.7 V to 3.6 V
 Fast access time: 45/55 ns (max)
 Power dissipation:
 Active: 9 mW/MHz (typ)
 Standby: 1.5 W (typ)
 Completely static memory.
 No clock or timing strobe required
 Equal access and cycle times
 Common data input and output.
 Three state output
 Battery backup operation.
 2 chip selection for battery backup
 Temperature range: 40 to +85C
 Byte function (x8 mode) available by BYTE# & A-1
 Embedded ECC (error checking and correction) for single-bit error correction
Rev.1.02, Feb.23.2017, page 1 of 19