R1LV0816ASB-5SI Datasheet, PDF (1/18 Pages) Renesas Technology Corp – 8Mb Advanced LPSRAM (512k word x 16bit)

R1LV0816ASB – 5SI, 7SI
8Mb Advanced LPSRAM (512k word x 16bit)
REJ03C0387-0100
Rev.1.00
2009.12.07
Description
The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1LV0816ASB is suitable for memory applications where a simple interfacing, battery operating and
battery backup are the important design objectives.
The R1LV0816ASB is packaged in a 44pin thin small outline mount device [11.76mm×18.41mm 44-pin
plastic TSOP (II)]. It gives the best solution for a compaction of mounting area as well as flexibility of wiring
pattern of printed circuit boards.
Features
• Single 2.4-3.6V power supply
• Small stand-by current: 1.2μA (Vcc=3.0V, typ.)
• No clocks, No refresh
• All inputs and outputs are TTL compatible
• Easy memory expansion by CS#, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie capability
• OE# prevents data contention in the I/O bus
• Operation temperature: -40 ~ +85°C
Ordering information
Type No.
R1LV0816ASB-5SI
R1LV0816ASB-7SI
Power supply
2.7V to 3.6V
2.4V to 2.7V
2.4V to 3.6V
Access time
55 ns
70 ns
70 ns
Temperature
Range
Package
11.76mm×18.41mm 44-pin plastic TSOP (II)
-40 ~ +85°C
(normal-bend type) (44P3F)
REJ03C0387-0100 Rev.1.00 2009.12.07
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