R1LV0816ABG-5SI Datasheet, PDF (1/18 Pages) Renesas Technology Corp – 8Mb Advanced LPSRAM (512k word x 16bit)

R1LV0816ABG -5SI, 7SI
8Mb Advanced LPSRAM (512k word x 16bit)
REJ03C0393-0100
Rev.1.00
2009.12.08
Description
The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1LV0816ABG is suitable for memory applications where a simple interfacing, battery operating and
battery backup are the important design objectives.
The R1LV0816ABG is packaged in a 48balls fine pitch ball grid array [f-BGA / 7.5 mm×8.5mm with the
ball-pitch of 0.75mm and 6x8 array]. It gives the best solution for a compaction of mounting area as well
as flexibility of wiring pattern of printed circuit boards.
Features
Single 2.4-3.6V power supply
Small stand-by current: 1.2 A (Vcc=3.0V, typ.)
No clocks, No refresh
All inputs and outputs are TTL compatible
Easy memory expansion by CS1#, CS2, LB# and UB#
Common Data I/O
Three-state outputs: OR-tie capability
OE# prevents data contention in the I/O bus
Operation temperature: -40 ~ +85°C
Ordering information
Type No.
R1LV0816ABG-5SI
R1LV0816ABG-7SI
Power supply
2.7V to 3.6V
2.4V to 2.7V
2.4V to 3.6V
Access time
55 ns
70 ns
70 ns
Temperature
Range
-40 ~ +85°C
Package
48-ball fBGA with 0.75mm ball pitch
PTBG0048HB-A(48FHH)
REJ03C0393-0100 Rev.1.00 2009.12.08
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