R1LV0416CBG-I Datasheet, PDF (1/16 Pages) Renesas Technology Corp – Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)

R1LV0416CBG-I Series
Wide Temperature Range Version
4M SRAM (256-kword × 16-bit)
REJ03C0259-0001
Preliminary
Rev.0.01
Jan.11.2005
Description
The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized
higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor
memory cell). The R1LV0416CBG-I Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 48-pin CSP (0.75 mm ball pitch).
Features
• Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
 Active: 5.0 mW/MHz (typ)(V_CC = 2.5 V)
: 6.0 mW/MHz (typ) (V_CC = 3.0 V)
 Standby: 1.25 µW (typ) (V_CC = 2.5 V)
: 1.5 µW (typ) (V_CC = 3.0 V)
• Completely static memory.
 No clock or timing strobe required
• Access and cycle times are equal.
• Common data input and output.
 Three state output
• Battery backup operation.
 2 chip selection for battery backup
• Temperature range: −40 to +85°C
Ordering Information
Type No.
R1LV0416CBG-5SI
R1LV0416CBG-7LI
Access time
55 ns
70 ns
Package
48-ball CSP with 0.75 mm ball pitch (48FHH)
Preliminary: The specifications of this device are subject to change without notice. Please contact your nearest
Renesas Technology’s Sales Dept. regarding specifications.
Rev.0.01, Jan.11.2005, page 1 of 14