R1LV0414D Datasheet, PDF (1/14 Pages) Renesas Technology Corp – 4M SRAM (256-kword × 16-bit)

R1LV0414D Series
4M SRAM (256-kword × 16-bit)
REJ03C0312-0100
Rev.1.00
May.24.2007
Description
The R1LV0414D is a 4-Mbit static RAM organized 256-kword × 16-bit, fabricated by Renesas’s high-performance
0.15µm CMOS and TFT technologies. R1LV0414DSeries has realized higher density, higher performance and low
power consumption. The R1LV0414D Series offers low power standby power dissipation; therefore, it is suitable for
battery backup systems. It has packaged in 44-pin TSOP II.
Features
• Single 3.0 V supply: 2.7 V to 3.6 V
• Fast access time: 55/70 ns (max)
• Power dissipation:
 Standby: 3 µW (typ) (V_CC = 3.0 V)
• Equal access and cycle times
• Common data input and output.
 Three state output
• Battery backup operation.
• Temperature range: -40 to +85°C
Ordering Information
Type No.
R1LV0414DSB-5SI
R1LV0414DSB-7LI
Access time
55 ns
70 ns
Package
400-mil 44-pin plastic TSOP II (44P3W-H)
Rev.1.00, May.24.2007, page 1 of 12