R1LV0216BSB_17 Datasheet, PDF (1/14 Pages) Renesas Technology Corp – R1LV0216BSB

R1LV0216BSB
2Mb Advanced LPSRAM (128k word x 16bit)
R10DS0273EJ0100
Rev.1.00
2017.1.27
Description
The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131,072-word by 16-bit, fabricated
by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density,
higher performance and low power consumption. The R1LV0216BSB is suitable for memory applications where a
simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0216BSB has
been packaged in 44-pin TSOP.
Features
 Single 2.7V~3.6V power supply
 Small stand-by current: 1µA (3.0V, typical)
 No clocks, No refresh
 All inputs and outputs are TTL compatible.
 Easy memory expansion by CS#, LB# and UB#
 Common Data I/O
 Three-state outputs: OR-tie Capability
 OE# prevents data contention on the I/O bus
Ordering Information
Orderable part name
R1LV0216BSB-5SI#B1
R1LV0216BSB-5SI#S1
Access
time
55 ns
Temperature
range
-40 ~ +85°C
Package
400-mil 44pin plastic TSOP (II)
Shipping container
Tray
Embossed tape
R10DS0273EJ0100 Rev.1.00
2017.1.27
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