QN7002 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – N-CHANNEL MOSFET FOR SWITCHING

Preliminary Data Sheet
QN7002
N-CHANNEL MOSFET FOR SWITCHING
R07DS0269EJ0100
Rev.1.00
Mar 11, 2011
Description
The QN7002, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven
directly by a 4.5 V power source.
Features
• Directly driven by a 4.5 V power source.
• Low on-state resistance
RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)
RDS(on)2 = 3.2 Ω MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
QN7002-T1B-AT
Pure Sn
3000p/Reel
SC-59 (Mini Mold)
Remark "-AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Remark for Agent
ORDER NUMBER “2SK4079(1)” must be used to order, instead of “QN7002”. For instance, “2SK4079(1)-T1B-AT”
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) ^Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Note PW ≤ 10 μs, Duty Cycle ≤ 1%
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
60
V
±20
V
200
mA
±800
mA
200
mW
150
°C
−55 to +150
°C
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ±400 V (MIL STD; C = 100 pF, R = 1.5 kΩ, 5 times), as reference value.
R07DS0269EJ0100 Rev.1.00
Mar 11, 2011
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