PD166105GS_15 Datasheet, PDF (1/17 Pages) Renesas Technology Corp – MOS INTEGRATED CIRCUIT

PD166105GS
MOS INTEGRATED CIRCUIT
Preliminary Data Sheet
R07DS0604EJ0100
Rev.1.00
Jan 19, 2012
Description
The PD166105 is a high-voltage, dual output, and N-channel low-side intelligent power device with built-in
overtemperature-protection, overcurrent-limitation, and disconnection-detection circuits.
It protects itself by shutting down or limiting current when it detects overtemperature or overcurrent.
Output MOS shut down is restarted automatically by cooling of the chip temperature.
When load is normal, a diagnostic output is produced on detection of a flyback voltage.
When load is disconnected, diagnostic output stops.
Features
 High voltage dual output low side driver
 Built-in overcurrent limitation circuits and overtemperature protection circuits
 Shuts down by overtemperature detection
 Restarts automatically after cooling
 Built-in dynamic clamping circuit (100 V Min.)
 Built-in disconnection-detection circuit
 A diagnostic output is produced on detection of a flyback voltage.
 Diagnostic output stops on disconnection.
 Low on-state resistance
 High temperature operation (Tch = 175°C Max.)
 Small 20-pin SOP package
Application
 Injector driver
Ordering Information
Part No.
PD166105GS-E1-AY
PD166105GS-E2-AY
Lead Plating
Sn
Sn
Packing
Tape 2500 p/reel
Tape 2500 p/reel
Package
20-pin plastic SOP (7.62 mm (300))
20-pin plastic SOP (7.62 mm (300))
R07DS0604EJ0100 Rev.1.00
Jan 19, 2012
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