PA2763_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

μ PA2763
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0003EJ0100
Rev.1.00
May 31, 2010
Description
The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications.
Features
• Low on-state resistance
⎯ R_DS(on)1 = 23.0 mΩ MAX. (V_GS = 10 V, I_D = 21 A)
⎯ R_DS(on)2 = 28.0 mΩ MAX. (V_GS = 8 V, I_D = 21 A)
• Low C_iss 2100 pF TYP.
• Built-in gate protection diode
• Thin type surface mount package with heat spreader (8-pin HVSON)
• RoHS Compliant
Absolute Maximum Ratings (T_A = 25°C)
Item
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC) (T_C = 25°C)
Drain Current (pulse) ^∗1
Total Power Dissipation^∗2
Total Power Dissipation (PW = 10 sec) ^∗2
Total Power Dissipation (T_C = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ^∗3
Single Avalanche Energy ^∗3
Symbol
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
P_T2
P_T3
T_ch
T_stg
I_AS
E_AS
Ratings
100
±20
±42
±84
1.5
4.6
83
150
-55 to + 150
24.7
61.0
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ^∗2
R_th(ch-A)
83.3
°C/W
Channel to Case (Drain) Thermal Resistance
R_th(ch-C)
1.5
°C/W
Notes: ^∗1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
∗_{2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt}
∗_{3. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, L = 100 μ H, VGS = 20→0 V}
R07DS0003EJ0100 Rev.1.00
May 31, 2010
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