PA2461T1Q_15 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

μ PA2461T1Q
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0186EJ0100
Rev.1.00
Dec 06, 2010
Description
The μ PA2461T1Q is a switching device, which can be driven directly by a 2.5 V power source.
The μ PA2461T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and so on.
Features
• 2.5 V drive available
• Low on-state resistance
⎯ R_DS(on)1 = 21.5 mΩ MAX. (V_GS = 4.5 V, I_D = 3.0 A)
⎯ R_DS(on)2 = 22.0 mΩ MAX. (V_GS = 4.0 V, I_D = 3.0 A)
⎯ R_DS(on)3 = 25.0 mΩ MAX. (V_GS = 3.1 V, I_D = 3.0 A)
⎯ R_DS(on)4 = 32.0 mΩ MAX. (V_GS = 2.5 V, I_D = 3.0 A)
• Built-in G-S protection diode against ESD
Ordering Information
Part No.
μ PA2461T1Q-E1-AX ^∗1
LEAD PLATING
Ni/Pd/Au
PACKING
8 mm embossed taping
Package
8-pin HUSON (2720)
3000 p/reel
Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (T_A = 25°C)
Item
Symbol
N-CHANNEL
Drain to Source Voltage (V_GS = 0 V)
Gate to Source Voltage (V_DS = 0 V)
Drain Current (DC) ^∗1
Drain Current (pulse) ^∗2
Total Power Dissipation (2 unit) ^∗1
V_DSS
V_GSS
I_D(DC)
I_D(pulse)
P_T1
30
±12
±6.5
±50
1.0
Channel Temperature
T_ch
150
Storage Temperature
T_stg
−55 to +150
Notes: ^∗1. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗_{2. PW ≤ 10 μs, Duty Cycle ≤ 1%}
Unit
V
V
A
A
W
°C
°C
R07DS0186EJ0100 Rev.1.00
Dec 06, 2010
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