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| NX8350TS_15 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION | |||
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Preliminary Data Sheet
NX8350TS
LASER DIODE
1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
R08DS0025EJ0100
Rev.1.00
Sep 19, 2010
DESCRIPTION
The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser
diode TOSAs (transmitter optical subassembly) with InGaAs monitor PIN-PD in an LC receptacle type package
designed for CFP transceiver.
FEATURES
⢠Internal optical isolator
⢠Peak emission wavelength
⢠Optical output power
⢠Low threshold current
⢠Wide operating temperature range
⢠InGaAs monitor PIN-PD
⢠IEEE802.3ba compliant
1 271/1 291/1 311/1 331 nm
Pf = 2 dBm
Ith = 8 mA TYP. @ TC = 25°C
TC = â5 to +85°C
APPLICATIONS
⢠40 G BASE-LR4
R08DS0025EJ0100 Rev.1.00
Sep 19, 2010
Page 1 of 7
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