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NX8349YK_15 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Preliminary Data Sheet
NX8349YK
LASER DIODE
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
R08DS0118EJ0100
Rev.1.00
Dec 13, 2013
DESCRIPTION
The NX8349YK is 1 310 nm Multiple Quantum Wells (MQW) structured Distributed Feed-Back (DFB) laser diode
TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for
SFP+/XFP transceiver.
FEATURES
• Internal optical isolator
• Optical output power
• Low threshold current
• Wide operating temperature range
• InGaAs monitor PIN-PD
Pf = −3 dBm
Ith = 8 mA TYP. @ TC = 25°C
TC = −5 to +95°C
APPLICATIONS
• 10 G BASE-LW/LR
• 10 G Fibre Channel
R08DS0118EJ0100 Rev.1.00
Dec 13, 2013
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