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| NX8349TS_15 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION | |||
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Preliminary Data Sheet
NX8349TS
LASER DIODE
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
R08DS0002EJ0200
Rev.2.00
Dec 13, 2013
DESCRIPTION
<R> The NX8349TS is 1 310 nm Multiple Quantum Wells (MQW) structured Distributed Feed-Back (DFB) laser diode
TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package designed for
SFP+/XFP transceiver.
FEATURES
⢠Internal optical isolator
⢠Optical output power
⢠Low threshold current
⢠Wide operating temperature range
⢠InGaAs monitor PIN-PD
Pf = â3 dBm
Ith = 8 mA TYP. @ TC = 25°C
TC = â5 to +95°C
APPLICATIONS
⢠10 G BASE-LW/LR
⢠10 G Fibre Channel
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0002EJ0200 Rev.2.00
Dec 13, 2013
Page 1 of 7
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