NX6351GP_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE

Preliminary Data Sheet
NX6351GP Series
LASER DIODE
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION
R08DS0087EJ0100
Rev.1.00
Feb 25, 2013
DESCRIPTION
The NX6351GP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple
Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser
diode with InGaAs monitor PIN-PD.
APPLICATIONS
• 9.8 Gbps CPRI
• 10G E-PON ONU
FEATURES
• Optical output power
• Low threshold current
• Differential efficiency
• Wide operating temperature range
• InGaAs monitor PIN-PD
• CAN package
• Focal point
P_O = 8.5 mW
I_th = 7 mA
η_d = 0.35 W/A
T_C = −40 to +85°C
φ 5.6 mm
10.2 mm
R08DS0087EJ0100 Rev.1.00
Feb 25, 2013
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