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NX6350EP_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE | |||
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Preliminary Data Sheet
NX6350EP Series
LASER DIODE
1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE
FOR 40GBASE-LR4 APPLICATION
R08DS0066EJ0100
Rev.1.00
Aug 14, 2012
DESCRIPTION
The NX6350EP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum
Well (MQW) structured Distributed Feed-Back (DFB) laser diode with
InGaAs monitor PIN-PD.
APPLICATIONS
⢠40GBASE-LR4
⢠Bi-Directional 10G SFP+ (CPRI,10G-Ethernet)
FEATURES
⢠Optical output power
⢠Low threshold current
⢠Differential efficiency
⢠Wide operating temperature range
⢠InGaAs monitor PIN-PD
⢠CAN package
⢠Focal point
PO = 8.5 mW
Ith = 8 mA
ηd = 0.35 W/A
TC = â5 to +85°C
Ï 5.6 mm
6.2 mm
R08DS0066EJ0100 Rev.1.00
Aug 14, 2012
Page 1 of 5
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