NX6314EH_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE

Preliminary Data Sheet
NX6314EH
LASER DIODE
1 310 nm InGaAsP MQW-DFB LASER DIODE
FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
R08DS0054EJ0100
Rev.1.00
Jan 19, 2012
DESCRIPTION
The NX6314EH is a 1 310 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATIONS
• 1.25 Gb/s FTTH P2P
• 3 Gb/s BTS
FEATURES
• Optical output power
• Low threshold current
• Differential efficiency
• Wide operating temperature range
• InGaAs monitor PIN-PD
• CAN package
• Focal point
P_O = 5.0 mW
I_th = 10 mA
η_d = 0.4 W/A
T_C = −40 to +85°C
φ 5.6 mm
6.7 mm
R08DS0054EJ0100 Rev.1.00
Jan 19, 2012
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