NX6240GP Datasheet, PDF (1/7 Pages) Renesas Technology Corp – LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION

Preliminary Data Sheet
NX6240GP
LASER DIODE
1 270 nm AlGaInAs MQW-DFB LASER DIODE
FOR 10 Gb/s E-PON ONU APPLICATION
R08DS0057EJ0100
Rev.1.00
Mar 01, 2012
DESCRIPTION
The NX6240GP is a 1 270 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATIONS
• 10 Gb/s E-PON ONU
FEATURES
• Optical output power
• Low threshold current
• Differential efficiency
• Wide operating temperature range
• InGaAs monitor PIN-PD
• CAN package
• Focal point
P_O = 8.5 mW
I_th = 8 mA
η_d = 0.3 W/A
T_C = −5 to +85°C
φ 5.6 mm
10.2 mm
R08DS0057EJ0100 Rev.1.00
Mar 01, 2012
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