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| NP90N055MUK Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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Preliminary Data Sheet
NP90N055MUK, NP90N055NUK
MOS FIELD EFFECT TRANSISTOR
R07DS0602EJ0100
Rev.1.00
Jan 11, 2012
Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
ï· Super low on-state resistance
RDS(on) = 3.8 mï MAX. (VGS = 10 V, ID = 45 A)
ï· Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)
ï· Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP90N055MUK-S18-AY *1
NP90N055NUK-S18-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tube 50 p/tube
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-220 (MP-25K)
TO-262 (MP-25SK)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Repetitive Avalanche Current *2
IAR
Repetitive Avalanche Energy *2
EAR
Notes: *1 TC = 25°C, PW ï£ 10 ïs, Duty Cycle ï£ 1%
*2 RG = 25 ï, VGS = 20 ï® 0 V
Ratings
55
ï±20
ï±90
ï±360
176
1.8
175
â55 to 175
38
144
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.85
°C/W
83.3
°C/W
R07DS0602EJ0100 Rev.1.00
Jan 11, 2012
Page 1 of 6
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