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NP75P03YDG_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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Preliminary Data Sheet
NP75P03YDG
MOS FIELD EFFECT TRANSISTOR
R07DS0020EJ0200
Rev.2.00
Mar 16, 2011
Description
The NP75P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Low on-state resistance
⯠RDS(on) = 6.2 mΩ MAX. (VGS = â10 V, ID = â37.5 A)
⢠Low Ciss: Ciss = 3200 pF TYP. (VDS = â25 V, VGS = 0 V)
⢠Logic level drive type
⢠Designed for automotive application and AEC-Q101 qualified
⢠Small size package 8-pin HSON
Ordering Information
Part No.
LEAD PLATING
PACKING
NP75P03YDG -E1-AY â1
Pure Sn (Tin)
Tape 2500 p/reel
NP75P03YDG -E2-AY â1
Note: â1. Pb-free (This product does not contain Pb in the external electrode.)
Package
8-pin HSON, Taping (E1 type)
8-pin HSON, Taping (E2 type)
<R>
<R>
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) â2
Channel Temperature
Storage Temperature
Single Avalanche Current â3
Single Avalanche Energy â3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
â30
m20
m75
m225
138
1.0
175
â55 to +175
27
73
Unit
V
V
A
A
W
W
°C
°C
A
mJ
<R>
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance â2
Rth(ch-C)
Rth(ch-A)
1.09
150
°C/W
°C/W
Notes: â1. TC = 25°C, PW ⤠10 μs, Duty Cycle ⤠1%
â2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt
*3. Starting Tch = 25°C, VDD = â15 V, RG = 25 Ω, L = 100 μH, VGS = â20 â 0 V
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R07DS0020EJ0200 Rev.2.00
Mar 16, 2011
Page 1 of 6
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