 English |
|
|
|
|
|
|
|
| NP75N055YUK_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 55 V – 75 A – N-channel Power MOS FET Application: Automotive | |||
| |||
|
Preliminary Data Sheet
NP75N055YUK
55 V â 75 A â N-channel Power MOS FET
Application: Automotive
R07DS1005EJ0100
Rev.1.00
Feb 08, 2013
Description
The NP75N055YUK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
ï· Super low on-state resistance
RDS(on) = 4.5 mï MAX. (VGS = 10 V, ID = 38 A)
ï· Non logic level drive type
ï· Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP75N055YUK-E1-AY *1
NP75N055YUK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 2500 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
8-pin HSON
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
VDSS
VGSS
ID(DC)
ID(pulse)
55
ï±20
ï±75
ï±225
Total Power Dissipation (TC = 25°C)
PT1
138
Total Power Dissipation (TA = 25°C) *2
PT2
1.0
Channel Temperature
Tch
175
Storage Temperature
Repetitive Avalanche Current *3
Repetitive Avalanche Energy *3
Tstg
â55 to +175
IAR
32
EAR
102
Notes: *1 TC = 25°C, PW ï£ 10 ïs, Duty Cycle ï£ 1%
*2 Mounted on glass epoxy substrate of 40 mm ï´ 40 mm ï´ 1.6 mmt with 4% Copper area (35 ïm)
*3 RG = 25 ï, VGS = 20 V ï® 0 V
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.09 °C/W
150 °C/W
R07DS1005EJ0100 Rev.1.00
Feb 08, 2013
Page 1 of 6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese