NP179N055TUK Datasheet, PDF (1/8 Pages) Renesas Technology Corp – 55 V – 180 A – N-channel Power MOS FET

Preliminary Data Sheet
NP179N055TUK
55 V – 180 A – N-channel Power MOS FET
Application: Automotive
R07DS1249EJ0100
Rev.1.00
Mar 02, 2015
Description
The NP179N055TUK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
• Super low on-state resistance
R_DS(on) = 1.75 mΩ MAX. (V_GS = 10 V, I_D = 90 A)
• Low Ciss
Ciss = 9300 pF TYP. (V_DS = 25 V)
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP179N055TUK-E1-AY ^*1 Pure Sn (Tin)
Tape 800 p/reel
Taping (E1 type)
NP179N055TUK-E2-AY ^*1
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-263-7pin
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
ID(DC)
±180
Drain Current (pulse) ^*1
ID(pulse)
±720
Total Power Dissipation (TC = 25°C)
PT1
288
Total Power Dissipation (TA = 25°C) ^*2
PT2
1.8
Channel Temperature
Tch
175
Storage Temperature
Tstg
–55 to +175
Repetitive Avalanche Current ^*3
IAR
59
Repetitive Avalanche Energy ^*3
EAR
348
Notes: *1 TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
*2 Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% Copper area (35 μm)
*3 RG = 25 Ω, VGS = 20 V → 0 V
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52 °C/W
83.3 °C/W
R07DS1249EJ0100 Rev.1.00
Mar 02, 2015
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