 English |
|
|
|
|
|
|
|
| NP179N04TUK Datasheet, PDF (1/8 Pages) Renesas Technology Corp – N-channel Power MOS FET | |||
| |||
|
Preliminary Data Sheet
NP179N04TUK
40 V â 180 A â N-channel Power MOS FET
Application: Automotive
R07DS1248EJ0100
Rev.1.00
Feb 12, 2015
Description
The NP179N04TUK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
⢠Super low on-state resistance
RDS(on) = 1.25 mΩ MAX. (VGS = 10 V, ID = 90 A)
⢠Low Ciss
Ciss = 8900 pF TYP. (VDS = 25 V)
⢠Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP179N04TUK-E1-AY *1
NP179N04TUK-E2-AY *1
Lead Plating
Pure Sn (Tin)
Packing
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-263-7pin
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
VDSS
VGSS
ID(DC)
ID(pulse)
40
±20
±180
±720
Total Power Dissipation (TC = 25°C)
PT1
288
Total Power Dissipation (TA = 25°C) *2
PT2
1.8
Channel Temperature
Tch
175
Storage Temperature
Repetitive Avalanche Current *3
Repetitive Avalanche Energy *3
Tstg
â55 to +175
IAR
66
EAR
435
Notes: *1 TC = 25°C, PW ⤠10 μs, Duty Cycle ⤠1%
*2 Mounted on glass epoxy substrate of 40 mm à 40 mm à 1.6 mmt with 4% Copper area (35 μm)
*3 RG = 25 Ω, VGS = 20 V â 0 V
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52 °C/W
83.3 °C/W
R07DS1248EJ0100 Rev.1.00
Feb 12, 2015
Page 1 of 6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese