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| NP100N04NUJ_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR | |||
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NP100N04NUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0364EJ0100
Rev.1.00
Jun 13, 2011
Description
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
⢠Super low on-state resistance
⯠RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
⢠Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
⢠High current rating: ID(DC) = ±100 A
⢠Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP100N04NUJâS18-AY â1
Pure Sn (Tin)
Tube 50 p/tube
Note: â1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-262 (MP-25SK) TYP. 1.8g
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current â2
Repetitive Avalanche Energy â2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±100
±400
220
1.8
175
â55 to +175
60
360
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance â2
Rth(ch-C)
Rth(ch-A)
Notes: â1. TC = 25°C, PW ⤠10 μs, Duty Cycle ⤠1%
â2. Tch(peak) ⤠150°C, RG = 25 Ω
0.68
83.3
°C/W
°C/W
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 1 of 6
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