NESG7030M04 Datasheet, PDF (1/11 Pages) Renesas Technology Corp – NPN Silicon Germanium Carbon RF Transistor

Data Sheet
NESG7030M04
NPN Silicon Germanium Carbon RF Transistor
R09DS0037EJ0100
Rev.1.00
Apr 18, 2012
FEATURES
• The device is an ideal choice for low noise, high gain amplification.
NF = 0.75 dB TYP. @ V_CE = 2 V, I_C = 5 mA, f = 5.8 GHz
G_a = 14 dB TYP. @ V_CE = 2 V, I_C = 5 mA, f = 5.8 GHz
• P_{O (1 dB)} = 4.5 dBm TYP. @ V_CE = 2 V, I_{C (set)} = 10 mA, f = 2 GHz
• Maximum stable power gain: MSG =16.5 dB TYP. @ V_CE = 2 V, I_C = 15 mA, f = 5.8 GHz
• SiGe: C HBT technology
• This product is improvement of ESD.
• Flat-lead 4-pin thin-type super minimold (M04 PKG)
OUTLINE
RENESAS Package code : M04
(Package name : Flat-lead 4-pin thin-type super minimold (M04 PKG))
4
3
Note : Marking is "T1R."
1
2
1. Emitter
2. Collector
3. Emitter
4. Base
ORDERING INFORMATION
Part Number
NESG7030M04
Order Number
NESG7030M04-A
NESG7030M04-T2 NESG7030M04-T2-A
NESG7030M04-T2B NESG7030M04-T2B-A
Package
Flat-lead 4-pin thin-
type super minimold
(M04 PKG)
(Pb-Free)
Quantity
50 pcs
(Non reel)
3 kpcs/reel
15kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
Supplying Form
• 8 mm wide embossed taping
• Pin 1(Emitter), Pin 2
(Collector) face the
perforation side of the tape
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0037EJ0100 Rev.1.00
Apr 18, 2012
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