NESG3400M01 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – NPN Silicon Germanium RF Transistor

NESG3400M01
NPN Silicon Germanium RF Transistor
PreliminaryData Sheet
R09DS0025EJ0100
Rev.1.00
Jul 26, 2011
DESCRIPTION
The NESG3400M01 is an ideal choice for low noise, low distortion amplification.
FEATURES
• NF = 0.65 dB TYP. @ V_CE = 3.3 V, I_C = 15 mA, f = 1 GHz
• P_{o (1 dB)} = 21 dBm TYP. @ V_CE = 3.3 V, I_{C (set)} = 40 mA, f = 1 GHz
• OIP₃ = 35.5 dBm TYP. @ V_CE = 3.3 V, I_{C (set)} = 50 mA, f = 1 GHz
• Maximum stable power gain: MSG =13.0 dB TYP. @ V_CE = 3.3 V, I_C = 40 mA, f = 1 GHz
• SiGe HBT technology (UHS3) : f_T = 10 GHz
• This product is improvement of ESD
• 6-pin super minimold (M01 PKG)
APPLICATIONS
• Suitable for up to 1 GHz applications.
e.g. LNA (Low Noise Amplifier) or Power splitter for Digital-TV.
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
NESG3400M01 NESG3400M01-A
NESG3400M01-T1 NESG3400M01-T1-A
6-pin super
minimold
(M01 PKG)
(Pb-Free)
50 pcs •
(Non reel) •
3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
Supplying Form
8 mm wide embossed taping
Pin 4, 5, 6 face the perforation side of
the tape
ABSOLUTE MAXIMUM RATINGS (T_A = +25°C)
Parameter
Symbol
Ratings
Collector to Base Voltage
V_CBO
5.5
Collector to Emitter Voltage
V_CES
13
(Base Short)
Collector to Emitter Voltage
V_CEO
5.5
(Base Open)
Base Current ^Note1
I_B
36
Collector Current
I_C
400
Total Power Dissipation ^Note2
P_tot
480
Junction Temperature
T_j
150
Storage Temperature
T_stg
−65 to +150
Notes: 1. Depend on the ESD protect device.
2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
Unit
V
V
V
mA
mA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0025EJ0100 Rev.1.00
Jul 26, 2011
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