NESG340034 Datasheet, PDF (1/11 Pages) Renesas Technology Corp – NPN Silicon Germanium RF Transistor

NESG340034
NPN Silicon Germanium RF Transistor
PreliminaryData Sheet
R09DS0023EJ0200
Rev.2.00
Aug 18, 2011
DESCRIPTION
The NESG340034 is an ideal choice for low noise, low distortion amplification.
FEATURES
• NF = 0.65 dB TYP. @ V_CE = 5 V, I_C = 15 mA, f = 1 GHz
• P_{o (1 dB)} = 24 dBm TYP. @ V_CE = 5 V, I_{C (set)} = 40 mA, f = 1 GHz
• OIP₃ = 35.5 dBm TYP. @ V_CE = 5 V, I_{C (set)} = 40 mA, f = 1 GHz
• Maximum stable power gain: MSG =12.0 dB TYP. @ V_CE = 5 V, I_C = 40 mA, f = 1 GHz
• SiGe HBT technology (UHS3) : f_T = 10 GHz
• This product is improvement of ESD
• 3-pin power minimold (34 PKG)
APPLICATIONS
• Suitable for up to 1 GHz applications.
e.g. LNA (Low Noise Amplifier) or booster amplifier for Digital-TV.
OUTLINE
RENESAS Package code: 34
(Package name: 3-pin power minimold (34 PKG))
Note: Marking is "ST"
1. Emitter
2. Collector
3. Base
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG340034
NESG340034-A
3-pin power
25 pcs • Magazine case
NESG340034-T1
NESG340034-T1-A
minimold
(34 PKG)
(Pb-Free)
(Non reel)
1 kpcs/reel • Embossed tape 12 mm wide
• Pin 2 face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0023EJ0200 Rev.2.00
Aug 18, 2011
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