NESG3032M14 Datasheet, PDF (1/15 Pages) California Eastern Labs – NPN SILICON GERMANIUM RF TRANSISTOR

Preliminary Data Sheet
NESG3032M14
NPN SiGe RF Transistor for Low Noise, High-Gain
Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG)
R09DS0048EJ0300
Rev.3.00
Sep 18, 2012
<R> _FEATURES
• The NESG3032M14 is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• 4-pin lead-less minimold (M14, 1208 PKG)
<R> ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG3032M14 NESG3032M14-A
NESG3032M14-T3 NESG3032M14-T3-A
4-pin lead-less minimold
(M14, 1208 PKG)
(Pb-Free)
50 pcs
(Non reel)
10 kpcs/reel
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (NC) face the
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
Total Power Dissipation
IC
Ptot ^Note
35
150
mA
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0048EJ0300 Rev.3.00
Sep 18, 2012
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