NESG210719 Datasheet, PDF (1/10 Pages) NEC – NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

Preliminary Data Sheet
NESG210719
NPN SiGe RF Transistor for Low Noise, High-Gain
Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
R09DS0051EJ0400
Rev.4.00
Sep 24, 2012
<R> _FEATURES
• The NESG210719 is an ideal choice for OSC, low noise, high-gain amplification
• High breakdown voltage technology for SiGe Tr.
• 3-pin ultra super minimold (19, 1608 PKG)
<R> _{ORDERING INFORMATION}
Part Number
Order Number
Package
Quantity
Supplying Form
NESG210719
NESG210719-T1
NESG210719-A
NESG210719-T1-A
3-pin ultra super minimold
(19, 1608 PKG) (Pb-Free)
50 pcs
(Non reel)
3 kpcs/reel
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
<R> _{ABSOLUTE MAXIMUM RATINGS (TA = +25°C)}
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Ratings
Unit
VCBO
13.0
V
VCEO
5.5
V
VEBO
1.5
V
IC
Ptot ^Note
100
200
mA
mW
Tj
150
°C
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PCB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0051EJ0400 Rev.4.00
Sep 24, 2012
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