NESG2101M05 Datasheet, PDF (1/15 Pages) NEC – NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NESG2101M05
NPN SiGe RF Transistor for Medium Output Power Amplification (125 mW)
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
Data Sheet
R09DS0036EJ0300
Rev. 3.00
Jun 20, 2012
FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-
gain amplification
⎯ P_{O (1 dB)} = 21 dBm TYP. @ V_CE = 3.6 V, I_Cq = 10 mA, f = 2 GHz
⎯ NF = 0.6 dB TYP., G_a = 19.0 dB TYP. @ V_CE = 2 V, I_C = 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ V_CE = 3 V, I_C = 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: V_CEO (absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
<R> ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG2101M05 NESG2101M05-A
NESG2101M05-T1 NESG2101M05-T1-A
Flat-lead 4-pin thin-type
supper minimold
(M05, 2012 PKG)
(Pb-Free)
50 pcs
(Non reel)
3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
• 8 mm wide embossed taping
• Pin 3 (Collector), Pin 4
(Emitter) face the perforation
side of the tape
ABSOLUTE MAXIMUM RATINGS (T_A = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V_CBO
13.0
V
Collector to Emitter Voltage
V_CEO
5.0
V
Emitter to Base Voltage
V_EBO
1.5
V
Collector Current
Total Power Dissipation
I_C
100
mA
P_tot ^Note
500
mW
Junction Temperature
T_j
150
°C
Storage Temperature
T_stg
−65 to +150
°C
Note: Mounted on 38 cm² × 0.4 mm (t) polyimide PCB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0036EJ0300 Rev. 3.00
Jun 20, 2012
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