NESG2031M05 Datasheet, PDF (1/14 Pages) NEC – NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NESG2031M05
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
Flat-Lead 4-Pin Thin-Type Super Minimold (M05)
Data Sheet
R09DS0035EJ0400
Rev. 4.00
Jun 20, 2012
FEATURES
• The device is an ideal choice for low noise, high-gain at low current amplifications.
⎯ NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ V_CE = 2 V, I_C = 5 mA, f = 2 GHz
⎯ NF = 1.3 dB TYP., G_a = 10.0 dB TYP. @ V_CE = 2 V, I_C = 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ V_CE = 3 V, I_C = 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: V_CEO (absolute maximum ratings) = 5.0 V
• Flat-lead 4-pin thin-type super minimold (M05) package
<R> ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG2031M05
NESG2031M05-T1
NESG2031M05-A
NESG2031M05-T1-A
Flat-lead 4-pin thin-
type supper minimold
(M05, 2012 PKG)
(Pb-Free)
50 pcs
(Non reel)
3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
• 8 mm wide embossed
taping
• Pin 3 (Collector), Pin 4
(Emitter) face the
perforation side of the tape
ABSOLUTE MAXIMUM RATINGS (T_A = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V_CBO
13.0
V
Collector to Emitter Voltage
V_CEO
5.0
V
Emitter to Base Voltage
V_EBO
1.5
V
Collector Current
Total Power Dissipation
I_C
35
mA
P_tot ^Note
175
mW
Junction Temperature
T_j
150
°C
Storage Temperature
T_stg
−65 to +150
°C
Note: Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PCB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0035EJ0400 Rev. 4.00
Jun 20, 2012
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