NE5820M53_15 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – P-channel MOS Field Effect Transistor for Impedance Converter of Microphone

NE5820M53
P-channel MOS Field Effect Transistor
for Impedance Converter of Microphone
PreliminaryData Sheet
R09DS0005EJ0200
Rev.2.00
May 20, 2011
DESCRIPTION
The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.
The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.
FEATURES
• Low noise
: N_V = −114 dBV TYP. @V_DD = 2.0 V, C_in = 3 pF, R_L = 15 kΩ
• Low input capacitance
• Low consumption current
: C_iss = 1.5 pF TYP. @V_DD = 2.0 V, R_L = 15 kΩ
: I_DD = 85 μATYP. @V_DD = 2.0 V, R_L = 15 kΩ
• High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm)
• Built-in the capacitor for RF noise immunity
• High ESD voltage
APPLICATIONS
• Microphone, Sensor etc.
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity Marking
Supplying Form
NE5820M53-T1 NE5820M53-T1-A 3-pin thin-type
10 kpcs/reel
B8
• Embossed tape 8 mm wide
lead-less minimold
(Pb-Free)
• Pin 3 face the perforation
side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5820M53
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0005EJ0200 Rev.2.00
May 20, 2011
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