NE5550234 Datasheet, PDF (1/16 Pages) Renesas Technology Corp – Silicon Power MOS FET

Data Sheet
NE5550234
Silicon Power MOS FET
R09DS0039EJ0100
Rev.1.00
Apr 25, 2012
FEATURES
 High Output Power
 High power added efficiency
 High Linear gain
 High ESD tolerance
: P_out = 33.0 dBm TYP. (V_DS = 7.5 V, I_Dset = 40 mA, f = 460 MHz, P_in = 15 dBm)
: η_add = 68% TYP. (V_DS = 7.5 V, I_Dset = 40 mA, f = 460 MHz, P_in = 15 dBm)
: G_L = 23.5 dB TYP. (V_DS = 7.5 V, I_Dset = 40 mA, f = 460 MHz, P_in = 0 dBm)
 Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
 150 MHz Band Radio System
 460 MHz Band Radio System
 900 MHz Band Radio System
ORDERING INFORMATION
Part Number
Order Number
Package Marking
Supplying Form
NE5550234
NE5550234-AZ
3-pin
V5  12 mm wide embossed taping
NE5550234-T1
NE5550234-T1-AZ
power
minimold
(34 PKG)
(Pb-Free)
 Gate pin faces the perforation side of the tape
 12 mm wide embossed taping
 Gate pin faces the perforation side of the tape
 Qty 1 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550234
ABSOLUTE MAXIMUM RATINGS (T_A = 25C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
(50% Duty Pulsed)
Total Power Dissipation ^Note
Channel Temperature
Storage Temperature
Note: Value at T_C = 25C
Symbol
V_DS
V_GS
I_DS
I_DS-pulse
P_tot
T_ch
T_stg
Ratings
30
6.0
0.6
1.2
12.5
150
65 to +150
Unit
V
V
A
A
W
C
C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0039EJ0100 Rev.1.00
Apr 25, 2012
Page 1 of 14