NE3521M04_15 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

Data Sheet
NE3521M04
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
R09DS0058EJ0100
Rev.1.00
Mar 19, 2013
FEATURES
• Low noise figure and high associated gain:
NF = 0.85 dB TYP., Ga = 11 dB TYP. @ V_DS = 2 V, I_D = 10 mA, f = 20 GHz
NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @V_DS = 2 V, I_D = 6mA, f = 20 GHz (Reference Value)
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• DBS LNB gain-stage, Mix-stage
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3521M04-T2
Order Number
NE3521M04-T2-A
NE3521M04-T2B NE3521M04-T2B-A
Package
Quantity
Flat-lead 4-pin 3 kpcs/reel
thin-type super
minimold (M04)
(Pb-Free)
15 kpcs/reel
Marking
V86
Supplying Form
• Embossed tape 8 mm wide
• Pin 1 (Source), Pin 2 (Drain)
face the perforation side of the
tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3521M04
ABSOLUTE MAXIMUM RATINGS (T_A = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V_DS
4.0
V
Gate to Source Voltage
V_GS
–3.0
V
Drain Current
I_D
I_DSS
mA
Gate Current
I_G
Total Power Dissipation ^Note
P_tot
80
μA
125
mW
Channel Temperature
T_ch
+125
°C
Storage Temperature
T_stg
–65 to +125
°C
Note: Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
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