NE3520S03 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain

NE3520S03
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
FEATURES
• Low noise figure and high associated gain:
NF = 0.65 dB TYP., G_a = 13.5 dB TYP. @ f = 20 GHz, V_DS = 2 V, I_D = 10 mA
• K band Micro-X plastic (S03) package
Data Sheet
R09DS0029EJ0100
Rev.1.00
Oct 18, 2011
APPLICATIONS
• 20 GHz band DBS LNB
• Other K band communication system
ORDERING INFORMATION
Part Number
NE3520S03-T1C
Order Number
NE3520S03-T1C-A
Package
S03 package
(Pb-Free)
NE3520S03-T1D NE3520S03-T1D-A
Quantity
2 kpcs/reel
10 kpcs/reel
Marking
J
Supplying Form
• Embossed tape 8 mm wide
• Pin 4 (Gate) face the
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3520S03
ABSOLUTE MAXIMUM RATINGS (T_A = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V_DS
4.0
V
Gate to Source Voltage
V_GS
–3.0
V
Drain Current
I_D
I_DSS
mA
Gate Current
I_G
Total Power Dissipation ^Note
P_tot
100
μA
165
mW
Channel Temperature
T_ch
+125
°C
Storage Temperature
T_stg
–65 to +125
°C
Note: Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PWB
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 1 of 8