NE3519M04 Datasheet, PDF (1/13 Pages) Renesas Technology Corp – N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier

PreliminaryData Sheet
NE3519M04
R09DS0008EJ0100
Rev.1.00
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier ^{Oct 21, 2010}
FEATURES
• Low noise figure and high associated gain
NF = 0.40 dB TYP., G_a = 18.5 dB TYP. @V_DS = 2 V, I_D = 10 mA, f = 2 GHz
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, etc.)
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity Marking
Supplying Form
NE3519M04-T2 NE3519M04-T2-A Flat-lead 4-pin
3 kpcs/reel
V85 • Embossed tape 8 mm wide
NE3519M04-T2B
NE3519M04-T2B-A
thin-type super
minimold (M04)
(Pb-Free)
15 kpcs/reel
• Pin 1 (Source), Pin 2 (Drain)
face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3519M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Drain to Source Voltage
V_DS
Gate to Source Voltage
V_GS
4.0
−3.0
Drain Current
I_D
I_DSS
Gate Current
I_G
200
Total Power Dissipation ^Note
P_tot
150
Channel Temperature
T_ch
+150
Storage Temperature
T_stg
−65 to +150
Note: Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PWB
Unit
V
V
mA
μA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
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