NE3516S02_15 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

Data Sheet
NE3516S02
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
R09DS0038EJ0100
Rev.1.00
Apr 18, 2012
FEATURES
• Low noise figure and high associated gain
NF = 0.35 dB TYP., G_a = 14 dB TYP. @ f = 12 GHz, V_DS = 2 V, I_D = 10 mA
NF = 0.35 dB TYP., G_a = 13.5 dB TYP. @ f = 12 GHz, V_DS = 2 V, I_D = 6 mA (Reference Value)
• 4-pin Micro-X plastic (S02) package
APPLICATIONS
• X to Ku band DBS LNB
• Other Ku band communication system
ORDERING INFORMATION
Part Number
Order Number Package _{Quantity Marking}
Supplying Form
NE3516S02-T1C NE3516S02-T1C-A S02
2 kpcs/reel
NE3516S02-T1D NE3516S02-T1D-A ^package 10 kpcs/reel
(Pb-Free)
P
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3516S02
ABSOLUTE MAXIMUM RATINGS (T_A = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Drain to Source Voltage
V_DS
4.0
Gate to Source Voltage
V_GS
–3.0
Drain Current
I_D
I_DSS
Gate Current
Total Power Dissipation ^Note
I_G
100
P_tot
165
Channel Temperature
T_ch
+125
Storage Temperature
T_stg
–65 to +125
Note: Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PWB
Unit
V
V
mA
μA
mW
°C
°C
RECOMMENDED OPERATING RANGE (T_A = +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
V_DS
I_D
P_in
MIN.
+1
5
–
TYP.
+2
10
–
MAX.
+3
15
0
Unit
V
mA
dBm
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0038EJ0100 Rev.1.00
Apr 18, 2012
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