NE3509M14_15 Datasheet, PDF (1/12 Pages) Renesas Technology Corp – N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier

Data Sheet
NE3509M14
R09DS0011EJ0100
Rev.1.00
N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier Jan 21, 2011
FEATURES
• Super low noise figure and high associated gain high isolation
NF = 0.4 dB TYP., G_a = 18.5 dB TYP. @ V_DS = 2 V, I_D = 10 mA, f = 2 GHz
• 4-pin lead-less minimold (M14, 1208 PKG) package
APPLICATIONS
• Satellite radio (SDARS, DMB, DAB, etc.) antenna LNA
• GPS antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number Order Number
Package
Quantity Marking
NE3509M14-T3 NE3509M14-T3-A 4-pin lead-less 10 kpcs/reel
zR
minimold
(M14, 1208 PKG)
(Pb-Free)
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3509M14
Supplying Form
• Embossed tape 8 mm wide
• Pin 1 (Drain), Pin 4 (Source)
face the perforation side of
the tape
ABSOLUTE MAXIMUM RATINGS (T_A = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Drain to Source Voltage
V_DS
4.0
Gate to Source Voltage
V_GS
−3.0
Drain Current
I_D
I_DSS
Gate Current
I_G
200
Total Power Dissipation ^Note
P_tot
150
Channel Temperature
T_ch
+150
Storage Temperature
T_stg
−65 to +150
Note: Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PWB
Unit
V
V
mA
μA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0011EJ0100 Rev.1.00
Jan 21, 2011
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